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iGBT SkiiP 83AC 12iT1, SK No:20225451 iGBT SkiiP 83AHB 15T1, SK No:20225604
iGBT SkiiP 83AC 12iT
Greentech Vietnam
12 tháng
.
© by SEMIKRON 0698 B 16 – 77 SKiiP 83 AHB 15 Absolute Maximum Ratings Symbol Conditions 1) Values Units Bridge Rectifier VRRM ID IFSM/ITSM I²t Theatsink = 80 °C tp = 10 ms; sin. 180 °C, Tj = 25 °C tp = 10 ms; sin. 180 °C, Tj = 25 °C 1500 125 1000 5000 V A A A²s IGBT Chopper VCES VGES IC ICM Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C 1200 ± 20 95 / 65 190 / 130 V V A A Freewheeling Diode 2) VRRM IF IFM Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C 1200 38 / 26 76 / 52 V A A Tj Tj Tstg Visol Diode & IGBT Thyristor AC, 1 min. – 40 ... + 150 – 40 ... + 125 – 40 ... + 125 2500 °C °C °C V Characteristics Symbol Conditions 1) min. typ. max. Units Diode - Rectifier VF VTO rT Rthjh IF = 100 A Tj = 125 °C Tj = 125 °C Tj = 125 °C per diode – – – – 1,15 0,8 3,5 – – – – 0,7 V V mΩ K/W Thyristor - Rectifier VT VT (TO) rT Rthjh IGD VGT IGT IH IL dv/dtCR di/dtCR IF = 120 A Tj = 25 °C Tj = 125 °C Tj = 125 °C per thyristor Tj = 125 °C – – – – 5 – – – – 500 – – – – – – – – 250 600 – – 1,8 1,1 5 0,9 – 3 150 – – – 125 V V mΩ K/W mA V mA mA mA V/µs A/µs IGBT - Chopper VCEsat td(on) tr td(off) tf Eon + Eoff Cies Rthjh IC = 75 A Tj = 25 (125) °C VCC = 600 V; VGE = ± 15 V IC = 75 A; Tj = 125 °C Rgon = Rgoff = 15 Ω inductive load VCE = 25 V; VGE = 0 V, 1 MHz per IGBT – – – – – – – – 2,5(3,1) 35 70 450 70 18 5,0 – 3,0(3,7) 70 140 600 100 – – 0,35 V ns ns ns ns mJ nF K/W Tj = 25 °C Tj = 25 °C Tj = 125 °C MiniSKiiP 8 SEMIKRON integrated intelligent Power SKiiP 83 AHB 15 half controlled 3-phase bridge rectifier + IGBT braking chopper Case M8a UL recognized file no. E63532 • specification of temperature sensor see part A • common characteristics see page B 16 – 4 Options • also available with uncontrolled rectifier (called 83 ANB 15) • also available with powerful chopper, for characteristics please refer to SKiiP 83 AC 12 • also available with full controlled rectifier (called 83 ATB 15) 1) Theatsink = 25 °C, unless otherwise specified 2) CAL = Controlled Axial Lifetime Technology (soft and fast recovery) B 16 – 78 0698 © by SEMIKRON SKiiP 83 AHB 15 Characteristics Symbol Conditions 1) min. typ. max. Units Diode 2) - Freewheeling VF = VEC VTO rT IRRM Qrr Eoff Rthjh IF = 25 A Tj = 25 (125) °C Tj = 125 °C Tj = 125 °C IF = 25 A; VR = – 600 V diF/dt = – 500 A/µs VGE = 0 V, Tj = 125 °C per diode – – – – – – – 2,0(1,8) 1,0 32 25 4,5 1,0 – 2,5(2,3) 1,2 44 – – – 1,2 V V mΩ A µC mJ K/W Temperature Sensor RTS T = 25 / 100 °C 1000 / 1670 Ω Mechanical Data M1 Case case to heatsink, SI Units mechanical outline see pages B 16 –13 and B 16 – 14 2,5 – M8a 3,5 Nm MiniSKiiP 8 SEMIKRON integrated intelligent Power SKiiP 83 AHB 15 half controlled 3-phase bridge rectifier + IGBT braking chopper Case M8a © by SEMIKRON 0698 B 16 – 79 0 15 30 45 60 75 90 105 120 135 150 012345 17V 13V 15V 11V 9V 7V IC [A] 82AC1201 VCE [V] 0 15 30 45 60 75 90 105 120 135 150 012345 9V 7V 13V 17V 11V 15V IC [A] 82AC1202 VCE [V] 0 2 4 6 8 10 12 14 16 18 20 0 120 240 360 480 600V 800V VGE [V] 82AC1205 QG [nC] Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG) Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C Fig. 5 Typ. gate charge characteristic Fig. 6 Typ. capacitances vs. VCE VGE = 0 V f = 1 MHz ICpuls = 75 A 82AC1203.xls 0 5 10 15 20 25 30 0 30 60 90 120 150 IC A E mJ Eon Eoff Tj = 125 °C VCE = 600 V VGE = ± 15 V RG = 15 Ω 82AC1204.xls 0 6 12 18 24 0 10 20 30 40 RG Ω E mJ Eon Eoff Tj = 125 °C VCE = 600 V VGE = ± 15 V IC = 75 A B 16 – 80 0698 © by SEMIKRON Fig. 7 Gate trigger characteristics B 16 – 4 0698 © by SEMIKRON Tj = ≤ 150 °C VGE = ± 15 V tsc = ≤ 10 µs Lext < 25 nH Tj = ≤ 150 °C VGE = ± 15 V Tj = 150 °C VGE = ≥ 15 V Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT Fig. 7 Rated current of the IGBT ICop / IC = f (Th) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 ICop / IC Mini1207 Th [°C] 0 0,5 1 1,5 2 2,5 0 500 1000 1500 ICpuls/IC Mini1209 VCE [V] 0 2 4 6 8 10 12 0 500 1000 1500 Note: *Allowed numbers of short circuit:<1000 *Time between short circuit:>1s ICsc/ICN Mini1210 VCE [V] Fig. 11 Typ. freewheeling diode forward characteristic Fig. 12 Forward characteristic of the input bridge diode MiniSKiiP 1200 V MiniSKiiP 8 Input bridge part SKiiP 82 ANB 08 SKiiP 83 ANB 08 SKiiP 81 ANB 15 SKiiP 82 ANB 15 SKiiP 83 ANB 15 SKiiP 83 AHB 15 SKiiP 83 ATB 15 Circuit ANB Case M8a MiniSKiiP 8 Input bridge part SKiiP 82 ANB 08 SKiiP 83 ANB 08 SKiiP 81 ANB 15 SKiiP 82 ANB 15 SKiiP 83 ANB 15 SKiiP 83 AHB 15 SKiiP 83 ATB 15 Case M8a Layout and connections for the customer’s printed circuit board Pin Connection Diode bridge ANB Halfcontrolled AHB Thyristor bridge ATB 1 reserved reserved G2 Bot 2 ~ 1 ~ 1 ~ 1 3 ~ 2 ~ 2 ~ 2 4 reserved reserved G1 Bot 5 reserved G2 Top G2 Top 6 ~ 3 ~ 3 ~ 3 7 reserved G1 Top G1 Top 8 reserved G3 Top G3 Top 9 reserved reserved G3 Bot 10 + + + 11 – – – 12 + + + 13 – – – 14 Gate Br Gate Br Gate Br 15 Br Br Br 16 T + T + T + 17 T – T – T – Circuit AHB Circuit ATB
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